We propose a powerful method of controlling interaction between silicene anda substrate utilizing quantum size effect, which allows to grow silicene withtailored electronic properties. As an example we consider silicene on ultrathinPb(111) layers, and demonstrate how the properties of silicene, including thebinding energy, and the Dirac bands, can easily be tuned by quantum well statesof the substrate. We also discover a novel mechanism of protecting the Diracelectrons from the influence of the substrate. This is associated with specialarrangement of a part of Si atoms in silicene. These findings emphasize theessential role of interfacial coupling and open new routes to createsilicene-like two-dimensional structures with controlled electronic properties.
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